In the last few decades, chalcogenides of iron attracted several scientific researchers because of its effective individual physical, chemical, optical, and magnetic properties [1–3]. Indeed, Semiconductor of iron chalcogenides, compounds containing iron and chalcogen elements such as sulphur, selenium, tellurium, have attracted significant attention from researchers due to their diverse and unique properties. These compounds have been extensively studied for their various applications in different fields of science and technology [4]. Selenides of iron were found to exist in several non-stoichiometric, stoichiometric phases viz., Fe3Se4, Fe3Se7,Fe2Se4 and FeSe2, FeSe. Stoichiometric phases of iron selenide, iron diselenide have wurtzite and ferroselite structure with the ratio of iron and selenium (Fe:Se) found to be (0.85:1) have ferromagnetic, whereas the ratio value is less than (0.8:1) the system is paramagnetic [5–9]. The deposited stoichiometric phases of FeSe and FeSe2 is found to be an p-type with with band gap value around 1.26 and 1.03 eV focused the researchers towards its for interesting optoelectronic applications [2]. Recently, electroplating has become a straightforward, cost effective, and practical method for generating high-quality films suitable for various device applications. This technique offers several advantages, including its ability to produce large-area devices conveniently, its operation at low temperatures, and the flexibility to control film characteristics such as thickness, structure, and composition by easily modifying electrical parameters and the composition of the electrolyte solution [2,9]. X-ray diffraction results reported that the prepared films possess polycrystalline nature with wurtzite and ferroselite structure. Film composition with surface morphology represented that the deposited films have smooth surface with well defined stoichiometry. Optical properties reported that the deposited films found to exhibit indirect transition with band gap value 1.23 and 1.07 eV for FeSe and FeSe2, respectively. Also the determination of parameters band gap, refractive index, extinction coefficient, real, imaginary dielectric constant, electrical and optical conductivity to correlate the optical,electrical and electronic properties

Dr.Sethuramachandran Thanikaikarasan is presently working as a Associate Professor in the Department of Physics, Saveetha School of Engineering, Saveetha University (Deemed), Chennai, Tamil Nadu, India. He obtained his M.Sc and Ph.D Degree in Physics (Specialistation : Insturmentation; Materials Sciences;Thin films, Electrodeposition) in India 2004 and 2010, respectively.  He has vast research experience in the field of Thin films, Electrodeposition, optical and magnetic materials, photoelectrochemistry.He has awarded as Senior Research Fellow (CSIR-SRF), HRDG, New Delhi, India on 2008 upto 2010.He holds over 150 publications in the international Journals with Science Citation Index, Web of Science; Scopus, Google Scholar index (citations: 1627; Scopus: 1228 h index: 22; i10 index: 46). He has successfully completed research project funded amount (4,80,000)by Council of Science and Industrial Research (CSIR), HRDG, New Delhi, India and two major projects Rupees Fifty Lakhs (INR.50,00,000) funded by Board of Research in Nuclear Sciences, Department of Atomic Energy (BRNS-DAE),Baba Atomic Research Centre (BARC), Mumbai, India. He has is in the rank of (Scientists:1.446.058;Countries:219;Universities:23.032) in “AD Scientific Index” from 2021 upto 2024