Electrical and solid state properties of aluminum doped NiS deposited by chemical bath deposition method has been carried out in this work whereby the influence of the dopant on the electrical and solid state properties of NiS thin film material was the point on the focus. It was obviously showcased from the results such as the index of refraction, extinction coefficient, dielectric constants, optical conductance and in particular the electrical properties as obtained using four point probe that the variation of the dopant, aluminum concentration affected the behavior of the aforementioned properties the thin film in question there clarifying the belief that doping is one of the parameters that be used to modify the sulphide based chalcogenide. 

Keywords; Sulphide, Chalcogenide, Chemical Bath deposition, Aluminum, Electrical, Solid State, Properties, Influence

Prof. Emmanuel I. Ugwu is Professor of Solid State Physics & Material Science and the current head of Department of Physics, Nigerian Army University Biu, and Nigeria. He has attended so many conferences at both international and local level whereby for some of them he has served as a member of technical committee to the conference organizers and has also made lots of presentation during the conferences. He has published so many articles in many reputable in the area of Nano-science and material engineering in many reputable journals of which all are highly cited in Google Scholar and Research Gate.