Associate Professor  Hao  Lu
Xidian University,  China

Title: Recent Progress in Heterogenous Integration for Wide-bandgap Semiconductor

Abstract:

Multi-functional, High-speed communication system and power conversion are growing requirements. Wide-bandgap semiconductor material have gained much attention owing to their higher power handling capabilities compared to Si CMOS and III-V materials. However, due to low-cost and industry volume of the Silicon, it is the best way to integrated them into one chip/wafer.
In this talk, we report recent progress in the heterogenous integration of wide bandgap semiconductor electronic device. We will review the key material growth, fabrication process, interconnection technology, and integration scheme of the state-of-the-art worldwide technologies. Herein the presented wide-bandgap material HEMTs with CMOS-compatible gold-free process will achieve the ultra-low contact resistance, low Ron, and high DC/RF performance. These excellent results have demonstrated the heterogenous integration technique could be an attractive platform to enable low-cost, high-volume for future B5G/5G, high-speed power conversion applications.

Biography:

Hao Lu is currently an associate professor at Xidian University, China. He received the Ph.D. degree in electrical engineering from Xidian University, Xi'an, China. He has been engaged in the research of GaN-based microwave/millimeter wave electronic devices and key technologies of heterogenous integration. He has published over 60 technical papers in IEEE Electron Devices Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, IEDM, etc., and 33 chinese filed/pending patents. He has made several oral reports at international conferences such as IEEE WiPDA, IEEE ICTA, IWN, APWS, CSW etc. In 2021, he won the IEEE WiPDA-Asia Best Presentation Award, AMSE Best Presentation Award, and Xidian Excellent Doctoral Dissertation Funding. Dr. Lu is Member of IEEE, China Institute of Electronics (CIE), and Chinese Physical Society (CPS).
His specific research interests include the advanced fabrication, characterization, and heterogenous integration of wide band-gap semiconductor electronic devices.