Associate Professor  Xin  Feng
Xidian University,  China

Title: Research of Gallium Nitride Technology

Abstract:

Gallium nitride (GaN) is a wide bandgap semiconductor material and a typical representative of the third-generation semiconductors. Due to its excellent properties such as high voltage tolerance, high electron mobility, and radiation resistance, it is highly suitable for manufacturing high-performance RF and power electronic switch devices. Compared with the first and second-generation semiconductors like silicon and gallium arsenide, gallium nitride RF devices have advantages such as high power, high frequency, and high efficiency, and are widely used in aerospace, radar detection, communication, and other fields. The pilot production platform of the Guangzhou Third Generation Semiconductor Innovation Center of Xidian University has complete capabilities in simulation design, material growth, process manufacturing, packaging and testing. It has developed a full set of 6-inch silicon-based and silicon carbide-based gallium nitride RF devices and RF integrated circuits, as well as high-voltage gallium nitride power electronic device processes. It has broken through key technologies such as high-quality gallium nitride epitaxial materials, low-leakage isolation technology, low-contact-resistance source-drain ohmic contacts, air bridge interconnections, back through-hole electrodes, and ceramic packaging. The platform's process capability reaches a minimum line width of 60 nanometers, meeting the processing requirements of devices in the L to W bands, and its performance indicators have reached the international leading level.

Biography:

Xin Feng, Associate professor at Xidian University. She had received his Ph.D. from Xidian University under the guidance of Professor Yue Hao, a renowned expert in microelectronics and an academician of the Chinese Academy of Sciences. Her research focuses on wide bandgap semiconductor materials and devices. She has published over 20 SCI papers as the first or co-author in internationally renowned journals such as Nano Energy, eScience, Nano Research, Applied Physics Letters, Carbon, Journal of Energy Chemistry (with a cover story), Journal of Power Sources, IEEE Transactions on Microwave Theory and Techniques, and IEEE EDL/TED. She has applied for 15 patents and obtained 2 (including one international patent). She has led 5 projects, including a National Natural Science Foundation of China Youth Project, a Guangdong Provincial and Guangzhou Municipal Natural Science Foundation Youth Project, etc. She has received numerous awards, including the Shaanxi Provincial Outstanding Doctoral Dissertation Award, the First Prize of the Shaanxi Higher Education Science and Technology Research Achievement Award, the President's Award for Doctoral Students at Xidian University, the National Scholarship for Doctoral Students, the Guorui Scholarship, the Excellent Poster Award at the China Institute of Electronics Doctoral Forum, and the National Award in the Graduate Student Chip Design Competition.